QRD1114 Reflective Sensor


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900 Ks

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Detail about QRD1114 Reflective Sensor

The QRD1113 and QRD1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototrans- istor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113 and QRD1114. The phototransistor responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.


  • Phototransistor Output
  • No-Contact Surface Sensing
  • Unfocused for Sensing Diffused Surfaces 
  • Compact Package
  • Daylight Filter on sensor


Manufacturer: Fairchild Semiconductor
Sensing Distance: 1.27 mm
Collector- Emitter Voltage VCEO Max: 30 V
Maximum Collector Current: 0.3 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
Mounting Style: Through Hole
Fall Time: 50 us
If - Forward Current: 20 mA
Number of Channels: 1
Output Type: Phototransistor
Rise Time: 10 us
Sensing Method: Reflective
Vf - Forward Voltage: 1.7 V
Vr - Reverse Voltage: 5 V
Wavelength: 940 nm

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