Warning: Last items in stock!
The QRD1113 and QRD1114 reflective sensors consist of an infrared emitting diode and an NPN silicon phototrans- istor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113 and QRD1114. The phototransistor responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector.
|Sensing Distance:||1.27 mm|
|Collector- Emitter Voltage VCEO Max:||30 V|
|Maximum Collector Current:||0.3 mA|
|Maximum Operating Temperature:||+ 85 C|
|Minimum Operating Temperature:||- 40 C|
|Mounting Style:||Through Hole|
|Fall Time:||50 us|
|If - Forward Current:||20 mA|
|Number of Channels:||1|
|Rise Time:||10 us|
|Vf - Forward Voltage:||1.7 V|
|Vr - Reverse Voltage:||5 V|